IN SITU MEASUREMENTS OF As/P EXCHANGE DURING InAs/InP(001) QUANTUM WIRES GROWTH
نویسندگان
چکیده
Unintentional As/P exchange has a significant influence on InAs/InP nanostructures growth. In this paper we report on the As/P exchange reactions at different temperatures studied by in situ stress measurements and reflectance difference characterization. When arsenic atoms incorporate at the InP surface an asymmetric stress is built-up that is responsible for quantum wires formation. We obtain that arsenic atoms do not actively displace phosphorous from the surface at the range of surface temperatures and exposure times of interest for growth of InAs nanostructures by molecular beam epitaxy (MBE). Instead, the arsenic atoms bond to available In atoms left vacant by phosphorous desorption at the corresponding temperature.
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